LEYA
Iradar
Uvavanyo kunye noLinganiselo
Unxibelelwano
Ii-Amplifiers ze-RF Broadband ezisebenzisa amandla aphezulu ze-MM60180P45B zanamhlanje
Intshayelelo yemveliso
Imodeli iMM60180P45B yi-amplifier enamandla aphezulu ene-octave esebenza phakathi kwe-6 GHz kunye ne-18 GHz kwaye inikezela ngoluhlu olubanzi oluguquguqukayo olunamandla aqhelekileyo angama-30 Watts. Le amplifier yamandla eklasi ye-AB ifanelekile kwizicelo ze-C, X, Ku-band, ezisetyenziswa kakhulu kwiimarike zonxibelelwano lwerediyo, i-radar, unxibelelwano lwesathelayithi, uvavanyo kunye nokulinganisa.
Ii-amplifier zamandla ze-GaN zeMars RF zinenzuzo yokufumana nokukhupha isignali ezinzileyo enelahleko yokubuyisa engenayo ye--10dBc. I-amplifier ye-RF ye-wideband inokuqhagamshelwa kakuhle kwiinkqubo ze-RF, i-amplifier yamandla aphezulu isebenzisa i-impedance esemgangathweni yoshishino, ixabiso le-impedance yi-50 ohms.
Imveliso ye-broadband RF ibonakaliswa bubukhulu bayo obuncinci kunye namandla aphezulu, kunye nobukhulu be-150x90x30mm (5.90x3.54x1.18inch), kunye nobunzima obuncinci be-1.0kg (2.2Ibs) kwi-RF amplifier yodidi lwayo lwamandla.
Ukusetyenziswa kwe-gallium nitride (GaN) kunye netekhnoloji ye-chip-and-wire ekuveliseni kunokuxhasa ukuzuza okukhulu kwi-RF amplifier. I-GaN ikhawuleza ukuba yi-semiconductor material ekhethwayo kwizicelo ezininzi ze-transistor, kwaye ngenxa yokusebenza kwayo okugqwesileyo kobushushu, i-GaN ikhawuleza ukuba yi-semiconductor material ekhethwayo kwizicelo ezininzi ze-transistor, apho ukusebenza kakuhle kobushushu bezinto kunye namandla azo kuxhasa iimfuno ezibalulekileyo ze-RF ezifana namaxabiso aphezulu okuzuza, ukusetyenziswa kwamandla aphantsi, kunye nokukhupha okuphezulu.
Ii-transistors zeGaN zibonakalise ukuba zizinto ezithembekileyo, ezisebenzayo nezisebenzayo ezisebenza kakuhle kwiindawo ezinzima. I-GaN power amplifier ikwanegalelo elikhulu kushishino lonxibelelwano ngenxa yokukwazi kwazo ukutshintsha ngokukhawuleza kunye noyilo oluncinci, olukhaphukhaphu, noluhlala ixesha elide.
Esi sixhobo sokukhulisa amandla se-RF esibanzi sinoyilo oluncinci lwemodyuli kunye nenkqubo yokulawula nokukhusela eyakhelwe ngaphakathi ejonga kwaye ikhusela iisekethe kwaye iququzelele ukusetyenziswa kwexesha elide kwemveliso.
Izitshisi zobushushu ezisemgangathweni ophezulu zenza i-RF power module ikwazi ukugcina ukusebenza okuphezulu phantsi kweemeko ezahlukeneyo, kwaye siyakwazi ukubonelela abathengi ngezitshisi zobushushu ezikhethwayo, kwaye abathengi banokuqhagamshelana nathi nangaliphi na ixesha xa becela.
Ezona mpawu
• Ubungakanani obuncinci kunye nobunzima obuncinci
• I-broadband ekhawulezayo
• Igalelo le-50 Ohms kunye ne-Output zihambelana
• Iisekethe zolawulo kunye nokhuseleko ezakhelwe ngaphakathi
FAQ
Yintoni esenza siqiniseke ukuba siyakwazi ukubonelela ngezinto esinazo?
Simisele inkqubo yolawulo lwababoneleli ebanzi kakhulu, uvavanyo oluqatha lweemfaneleko zababoneleli kunye nokubekwa kwabathengisi kwindawo ethile. Oku kusenza sikwazi ukulawula ngcono umgangatho wezinto eziluhlaza zemveliso kunye nokunciphisa iingozi zomgangatho. Ngaphezu koko, siyakwazi ukufumana izinto eziluhlaza zemveliso ngokukhawuleza, nto leyo enegalelo elikhulu ekufinyezweni kwexesha lokuhanjiswa kwemveliso ye-RF. (Ukubekwa kwabathengisi kwindawo ethile kuthetha ukuba phantse zonke ii-transistors kunye nababoneleli bezixhobo zeMars RF zivela eTshayina, kwaye akukho kunqongophala kweempahla ngenxa yemigaqo-nkqubo yelizwe).
Singacebisa kwakhona
Umfanekiso
Inombolo yoMzekelo
Ishiti yedatha
Qala (MHz)
Ukuma (MHz)
I-Pout (iiWatts)
Inzuzo(dB)
I-Voltage(V)
Imo
Ubungakanani(mm)
Isicatshulwa
Qala:1.5
Yeka:30
I-Pout:200
Inzuzo:53
Ubungakanani:200x150x30