Kwizicelo ze-C-band, i-X-band, kunye ne-Ku-band, i-RF ultra-broadband high-power gallium nitride (GaN) amplifier ifanelekile kwaye igqibelele, ine-frequency yokusebenza encinci ye-6000 MHz kunye ne-frequency yokusebenza ephezulu ye-18000 MHz. Kwi-saturation, ihlala ine-40 dB power gain kunye ne-10 watts yamandla okukhupha. Xa amandla okukhupha eyi-5 Watts, ii-harmonics zale amplifier yamandla ye-GaN zinokufikelela kwi--20 dBc. Ngokwendlela esebenzayo, le nkcazo ibonisa amandla e-amplifier okuthintela ukuveliswa kwezibonakaliso ze-harmonic ezingafunekiyo, ukuqinisekisa ukuba imveliso yenziwe ikakhulu yi-frequency esisiseko ecetywayo kunye nokuphazamiseka okuncinci okuvela kumacandelo e-harmonic. I-input/output impedance yale amplifier ye-wideband yi-50 Ohms.

I-Mars RF imisele inkqubo yayo yokulawula umgangatho wemveliso kunye nenkqubo epheleleyo yemveliso ukuqinisekisa ukuba iimveliso zayo zisebenza kakuhle kakhulu kwaye zisebenza ubomi obude. Ke ngoko, sinikezela ngewaranti yeminyaka emithathu kunye newaranti yokuqala yasimahla yeenyanga ezili-18. Ngexesha lewaranti, ukuba kukho naziphi na iingxaki emva kokuthengisa ezibangelwa ngumgangatho wemveliso ngokwayo, sinikezela ngenkonzo yokutshintsha yasimahla.

√ I-broadband ebanzi kakhulu

√ Iklasi ye-AB

√ Isandisi-lizwi seGaN

√ Ulawulo olwakhelwe ngaphakathi

√ Ibhendi ye-C/X/Ku

√ Uyilo lwe-RF power amplifier

√ Ubunzima obuphantsi

1.Iingenelo zesixhobo seGaN kwi-amplifier yamandla?

Ukusebenzisa izixhobo zeGaN (Gallium Nitride) kwi-power amplifier kunika iingenelo ezininzi:

Uxinano lwaMandla aphezulu: Xa kuthelekiswa nobuchwepheshe obuqhelekileyo njengezixhobo ezisekelwe kwi-silicon, izixhobo ze-GaN zinamandla aphezulu oxinano lwamandla. Ngenxa yoku, zinokubonelela ngamandla amakhulu kwiphakheji encinci, nto leyo ebenza bafaneleke kakhulu kwizicelo ezisebenza kakuhle nezincinci.

Ukusebenza kakuhle okuphezulu: Xa kuthelekiswa nezinye iitekhnoloji ze-semiconductor, izixhobo ze-GaN zihlala zibonisa amaxabiso angcono okusebenza kakuhle