Nangona ii-amplifiers ze-RF eziqinileyo zinokwenza kakuhle kwi-SHF frequency band, i-voltage encinci yokusebenza kufuneka ifikelele kwi-26 volts kuphela, engaphantsi kwe-32 Volts, kwaye i-voltage eqhelekileyo imalunga ne-28 volts. I-amplifier yamandla e-broadband ye-8-12G ifanelekile kwi-X-band kwaye isebenza kakuhle kwiindawo ezifana ne-radar kunye nonxibelelwano lwesathelayithi njalo njalo.

Iitransistor zeGaN, eziye zabonakala zithembekile, zisebenza kakuhle, kwaye zisebenza kakuhle, zisetyenziswa kolu didi njenge-amplifier, kwaye iGaN ikhawuleza ukuba yi-semiconductor material ekhethwayo kwii-transistor ezininzi. IGaN inokuhamba okuphezulu kwe-electron, ixhasa inzuzo enkulu kwii-frequency eziphezulu, kwaye isebenza kakuhle xa kuthelekiswa netekhnoloji ye-LDMOS (laterally diffused MOSFET) efanayo. Iingenelo zeetransistor zeGaN ziquka uxinano lwamandla aphezulu, i-voltage ephezulu yokuqhekeka, i-thermal conductivity ephezulu, kunye neemfuno zamandla aphantsi. Ezi zibonelelo zinokukhokelela ekusebenzeni okuphezulu (nakwii-frequency eziphezulu), izinto ezincinci zefom, ukulinganiswa okuphantsi kwenkqubo iyonke, ukuthembeka okuphezulu, kunye nokusebenza okungcono kakhulu. IGaN ikwanawo amandla aphezulu okusebenza, okubangela ukusebenza kakuhle kobushushu kunye ne-voltage ephezulu yokuqhekeka. Iitransistor zeGaN zinokuphatha uludwe olubanzi lobushushu kuneetransistor eziqhelekileyo kwaye zisebenza kakuhle kwiindawo ezinzima, okwenza ukuba zilungele usetyenziso lweRF. Uyilo lwe-ab power amplifier efficiency lweklasi lulinganiswa ngobushushu kwaye i-cavity yenziwe nge-aluminium, ehlala ixesha elide kwaye iqinile kunezinye izinto. Zonke ezi setingi zibalaseleyo zezixhobo ziphumela kwi-solid state power amp evelisa ukusebenza ngcono, kunye nokusebenza okuqhelekileyo kwe-11%.