I-amplifier ye-frequency MM20180P37D yi-amplifier yamandla ye-AB yeklasi ye-multi-octave esebenza phakathi kwe-2 GHz kunye ne-18 GHz kwaye inikezela uluhlu olubanzi oluguquguqukayo olunamandla aqhelekileyo angama-5 Watts. Uyilo lokulahleka kokubuyisela okungenayo kwesi sixhobo se-RF esiqinileyo luqinisekisa ixabiso eliqhelekileyo le--10dB, ukuba abathengi bafuna enye idatha engcono yokulahleka kokubuyisela, nceda uqhagamshelane neqela lethu. Kwaye esi sixhobo samandla esisebenza rhoqo sinokudityaniswa kakuhle kwinkqubo yamandla kuba imveliso ye-RF isebenzisa i-impedance esemgangathweni yoshishino. Kwakhona i-voltage yokusebenza kunye nombane walo mqondiso we-RF zixabiso eliqhelekileyo le-28V kunye ne-2Amp ngokwahlukeneyo. Ngaphandle koko, ubushushu bokusebenza bemodyuli yamandla e-RF bunokuqala ukusuka kwi--40 degrees Celsius ukuya kwi-60 degrees Celsius. Ubushushu bokugcina bungafikelela kwi--45 degrees Celsius ukuya kwi-85 degrees Celsius. Kwaye ukufuma okuqhelekileyo kunokusebenza ngokuqhelekileyo ngaphantsi kwe-95%. Ke ngoko, le module yamandla e-microwave iyaziqhelanisa nobuninzi beendawo ezingqongileyo zengingqi. Ifanelekile kwizicelo ze-RF C&Ku ze-broadband ezininzi ze-octave.

Ukongeza, iMars RF inesebe layo letekhnoloji ye-micro assembly, eliqinisekisa kakhulu ukuhambelana kwee-amplifiers zethu zamandla e-RF ezisebenza rhoqo kunye neziphumo eziphezulu. Itekhnoloji ye-Micro assembly yitekhnoloji ye-electronic assembly ephucukileyo esebenzisa ngokupheleleyo iiteknoloji eziphambili zenkqubo ezifana netekhnoloji ye-high-density interconnect substrate, itekhnoloji ye-multi chip component, itekhnoloji ye-system/subsystem assembly, itekhnoloji ye-3D assembly, njl. Yindlela ebalulekileyo yetekhnoloji yokufezekisa iinjongo ze-miniaturization, i-light weighting, i-high-density 3D interconnect structure, i-wide operating frequency band, i-high operating frequency, kunye nokuthembeka okuphezulu kwezixhobo ze-elektroniki.

Okokugqibela, iMars RF iseke inkqubo engqongqo nesemgangathweni ophezulu yokulawula umgangatho wemveliso yeRF kunye nenkqubo yolawulo lomgangatho wemveliso ngokuhambelana nomgangatho ophezulu, okuqinisekisa ukuba yonke i-amplifier yamandla e-solid state isebenza ngcono kwaye ithembekile ngakumbi.

√ Isandisi-lizwi esinamandla aphezulu se-Broadband

√ Ukhuseleko oluphezulu kubushushu

√ Ukusebenza kakuhle kakhulu

√ Ubunzima obuKhaphukhaphu obunobuninzi obuyi-1.2 kg

√ Uyilo oluncinci olunobukhulu obuphezulu obuyi-80×80×22mm

√ Ukuphambuka okuphantsi

1. Yintoni indima yee-transistors ezisetyenziswa kwi-power amplifier?

I-RF power amplifier sisiguquli samandla, isizathu sokuba ikwazi ukukhulisa isignali, kuba inokuguqula amandla anikezelwa yi-DC power supply abe ngamandla esignali yokuphuma. Kwaye icandelo eliphambili lokugqiba lo msebenzi yi-transistor. Ke ngoko, ukukhethwa kwee-transistors zoyilo lokusebenza kwe-frequency amplifier kubalulekile.

2. Kufuneka amandla angakanani okufaka kule amplifier yamandla aphezulu e-broadband?

Nceda ujonge iPhepha ledatha ukuze ufumane i-amplifier ethile ye-SSPA ekuthethwa ngayo. Ukuba unemibuzo engaphezulu, nceda unxibelelane nathi.