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Ii-RF Broadband High Power Amplifiers MM1017P43A

Inombolo yoMzekelo: MM1017P43A

Ii-amplifiers ze-RF eziqinileyo Imodeli MM1017P43A sisixhobo sokukhulisa amandla aphezulu esisebenza ukusuka kwi-1000 MHz ukuya kwi-1700 MHz. Isixhobo sokukhulisa amandla esiphezulu siyile uluhlu olubanzi oluguquguqukayo kunye ne-20 Watts yamandla agcweleyo. Ukusetyenziswa kwezinto ezinamandla aphezulu eziphambili kwimveliso yesixhobo sokukhulisa amandla kuqinisekisa ukuveliswa kwamandla okugqwesileyo, ukuthembeka kwexesha elide kunye nokusebenza kakuhle. Le module ye-RF amp ye-solid state ifanelekile kwizicelo ezifuna ukuphazamiseka kwe-broadband mobile kunye nokusebenza kwamandla aphezulu kwiibhendi ezithile ngaphakathi koluhlu lwe-L frequency.

  • Qala 1000 MHz
  • Yeka 1700 MHz
  • I-Pout Iiwatts ezingama-20
  • Inzuzo 43 dB
  • I-Voltage 28 V
  • Okwangoku 4 Amp
  • Imo I-CW
  • Ubungakanani 140×85×20.5 mm
  • Isitokhwe 23

Intshayelelo yemveliso

I-amplifier yamandla kaMars RF i-MM1017P43A isebenzisa izinto zetyhubhu zeGaN eziphambili, ezinokufikelela kwi-44dB enobunzima obuyi-0.65kg kuphela, kunye nomlinganiselo we-voltage standing wave we-3:1 kunye nokusebenza okugqwesileyo kwe--10 dB return loss. I-amplifier yengxolo ephantsi ye-RF ifanelekile kwizicelo zebhendi ye-UHF kwaye ingasetyenziswa kakhulu kwiinethiwekhi ezingenazingcingo, usasazo, kunye neendawo zokusasaza ezikude. I-amp yamandla e-solid state MM1017P43A isebenzisa i-aluminium cavity, eyilwe ngokulinganisa ubushushu, ikhetha izinto ezifanelekileyo, ize iqinisekise ubungakanani obufanelekileyo bemveliso. Iindlela zonyango lomphezulu wemveliso zinokukhethwa kwezi zilandelayo: i-natural color conductive oxidation, i-nickel plating, i-color conductive oxidation, i-anodizing.
Ii-Amplifiers ze-Broadband High Power MM1017P43A ezisebenzisa i-transistor ye-GaN azipheleli nje ekubeni ne-electron mobility ephezulu kwaye zixhasa ukunyuswa okukhulu kwiifrequensi eziphezulu, kodwa zikwanayo namandla aphezulu okusebenza, nto leyo ebangela ukusebenza kakuhle kobushushu kunye ne-voltage ephezulu kakhulu yokuqhekeka. Ukusetyenziswa kwee-transistor ze-GaN kuxhasa iimfuno ezibalulekileyo ze-RF ezifana ne-high gain, ukusetyenziswa kwamandla aphantsi, i-throughput ephezulu, kunye nesantya sokutshintsha esikhawulezayo kakhulu. Ityhubhu ye-GaN esetyenziswa kwi-20W amp MM1017P43A inokhuseleko lwexesha lokuvula nokucima amandla, kunye nokhuseleko loxinzelelo olubi. Ii-transistor ze-Gallium nitride zinokuphatha uludwe olubanzi lobushushu kunee-transistor zemveli kwaye zisebenza kakuhle kwiindawo ezinzima, nto leyo ezenza zibe lukhetho olufanelekileyo kwizicelo ze-RF. Ii-transistor ze-Gallium nitride zibe nempembelelo enkulu kushishino lonxibelelwano ngenxa yokukwazi kwazo ukutshintsha ngokukhawuleza kunye noyilo oluncinci, olukhaphukhaphu, noluhlala ixesha elide. Ii-transistor ze-GaN zibonakaliswe zithembekile, zisebenza kakuhle, kwaye ziyasebenza.

Ezona mpawu

√ Uyilo oluqinileyo
√ I-broadband ekhawulezayo ekhawulezayo
√ Ubukhulu obuncinci kunye nobunzima obuncinci
√ Impedance yokufaka/yokukhupha eyi-50 ohm
√ Ukuthembeka okuphezulu kunye nokuqina

Singacebisa kwakhona

Umfanekiso
Inombolo yoMzekelo
Ishiti yedatha
Qala (MHz)
Ukuma (MHz)
I-Pout (iiWatts)
Inzuzo(dB)
I-Voltage(V)
Imo
Ubungakanani(mm)
Isicatshulwa
800
1000
200
53
28
I-CW
200x150x25
Izikhulisi zamandla aphezulu zeRF Broadband KB002052M47A
Ii-Amplifiers ze-RF Broadband eziPhakamileyo ze-KB002052M47A pdf
800
1000
200
53
28
I-CW
200x150x25
Fumana IxabisoIsitokhwe: 7
Izikhulisi zamandla aphezulu ze-RF Broadband KB0001003M53A
Qala:1.5
Yeka:30
I-Pout:200
Inzuzo:53
Ubungakanani:200x150x30

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