Isixhobo sokukhulisa i-RF Broadband MM0527P47A

Emva kovavanyo oluqatha lweMars RF, le amplifier ye-50w RF broadband MM0527P47A inokusebenza kumaqondo obushushu aphantsi angama--40 ° C kwaye isebenze ngokuqhelekileyo kumaqondo obushushu angaphantsi kwama-60 ° C. Ukugcina amaqondo obushushu okugcina phakathi kwama--45 ° C kunye nama-85 ° C akuyongxaki, njengoko ulwazi oluneenkcukacha lwe-icon yedatha lunokufumaneka kwiphepha ledatha. Le amplifier ye-RF broadband inokufikelela kwi-gain ye-47dB, enokufikelela kumandla okukhupha azinzileyo angama-50watts. Ngokuchanekileyo, amaxabiso alahlekileyo kunye ne-harmonic ale amplifier ye-RF broadband nawo agqwesileyo kakhulu, kunye namaxabiso alahlekileyo angama--70 dBc kunye nee-harmonics ukuya kuthi ga kwi--12 dBc. Le amplifier ye-RF broadband isebenzisa iityhubhu ze-gallium nitride ukuqinisekisa i-gain curve ezinzileyo, ngoko ke ixabiso le-in/out impedance ye-RF broadband amplifier linozinza kwi-50 Ω ixabiso eliqhelekileyo, kwaye ilahleko yokubuyisela okungenayo inozinza kwi--10 dB ixabiso eliqhelekileyo. Kwiindawo ze-RF broadband amplifier, ukusebenza kakuhle kwale mveliso kuyamangalisa kakhulu, kusebenza kakuhle ngaphezu kwama-29%, nto leyo enokwandisa ukusebenza okuqhubekayo kwenkqubo ngokulahlekelwa okuphantsi kakhulu, nto leyo eyenza inkqubo yakho yamandla izinze ngakumbi kwaye isebenze kakuhle.

√ I-Broadband kunye namandla aphezulu

√ Ukusebenza kakuhle kakhulu

√ Ulungelelwano Olukhulu

√ Ubungakanani obuncinci kunye nobunzima obuncinci

√ Ukuphambuka okuphantsi

Ziziphi iingenelo zokusebenzisa ii-transistors zeGaN kwi-RF broadband amplifiers?

Iityhubhu zeGaN zineentlobo ngeentlobo zezicelo ze-RF broadband amplifier kwiminyaka yakutshanje, kwaye zezona zinto zisetyenziswa kakhulu ngaphandle kweLDMOS kunye neGaNs. Ineempawu zobuninzi bamandla aphezulu, ukusebenza kakuhle, ububanzi bebhendi, i-voltage ephezulu yokuqhekeka, kunye nesantya sokutshintsha ngokukhawuleza njl. Imeko eneenkcukacha yile ilandelayo:

1. Uxinano lwaMandla aphezulu: Ii-transistors zeGaN zinokufikelela kumanqanaba aphezulu amandla ngobukhulu obuncinci xa kuthelekiswa nobuchwepheshe bendabuko obufana ne-LDMOS okanye i-GaAs. kwi-rf ukuya kwi-dc converter Olu xinano lwamandla aphezulu luluncedo kwizicelo apho indawo kunye nobunzima zizinto ezibalulekileyo.

2. Ukusebenza Kakuhle: Ii-transistors zeGaN zibonisa ukusebenza kakuhle kakhulu xa kuthelekiswa nezinye izinto ze-semiconductor, ezifana ne-silicon okanye iiGaAs. Oku kukhokelela ekusetyenzisweni kwamandla okuphantsi kunye nokuncipha kokusasazwa kobushushu, okufaka isandla ekusebenzeni kakuhle kwenkqubo iyonke kwi-solid state power amp.

3. I-Bandwidth ebanzi: Ii-transistors ze-GaN zine-bandwidth ebanzi ye-frequency xa kuthelekiswa nezinye iitekhnoloji, nto leyo ezenza zifaneleke kwii-apps zokusebenza ze-power amplifier. Oku kuvumela uyilo lwee-power amplifier ezinokusebenza kuluhlu olubanzi lwee-frequency ngaphandle kokunciphisa ukusebenza.

4. Isantya Sokutshintsha Ngokukhawulezileyo: Ii-transistors zeGaN zinesantya sokutshintsha ngokukhawuleza, nto leyo eluncedo kwizicelo ezifuna amaxesha okuvula/ukucima ngokukhawuleza okanye ukuguqulwa. Le propati yenza ii-transistors zeGaN zilungele ukusebenza kwe-high-frequency integrated power amplifier.