Imodyuli ye-RF amplifier MM80120P47C yimveliso ye-microwave ye-RF ene-octave eninzi. Inoluhlu olubanzi lwesignali ye-RF, isebenza ukusuka kwi-8000 MHz ukuya kwi-12000 MHz, kwaye inamandla okugcwala aqhelekileyo angama-50 Watts. I-amplifier enamandla aphezulu inexabiso lokufumana i-47dB kwaye i-gain flatness izinzile kwi-±1dB. Idatha yovavanyo egqwesileyo ibonisa amandla okudlulisela isignali ezinzileyo ye-wideband RF amplifier, nto leyo enciphisa umzamo womsebenzisi ekuqaliseni inkqubo yonke.

Imveliso ye-RF ye-Mars RF ye-MM80120P47C ingasetyenziswa kwi-X-band, esetyenziswa kakhulu kunxibelelwano lwe-radar kunye nesathelayithi. Phantsi kwebhendi ye-UHF, ekusetyenzisweni kwenkqubo ye-radar, le amplifier yamandla aphezulu e-wideband ineenzuzo zesakhiwo esincinci, ubunzima obulula, ukusebenza okuphezulu, ukuhlanganiswa kwenkqubo ephezulu, ukusebenza kakuhle kwe-RF kunye nokusetyenziswa kwamandla okuphantsi. Ukongeza, imodyuli yethu yamandla e-RF iguquguquka kakhulu kwaye inokwenziwa ngokwezifiso ukuhlangabezana neemfuno zamashishini ahlukeneyo kunye nezicelo, inika abasebenzisi izisombululo ezinokuthenjwa.

I-voltage eqhelekileyo yokusebenza yale amplifier enamandla aphezulu yi-28V, amandla aphumayo yi-8 Amp DC kwi-40 W. Iintlobo zezixhobo zokufaka kunye neziphumo ze-SMA eqhelekileyo, i-Female. Le amplifier ye-SSPA isebenzisa ii-transistors zeGallium Nitride ezinee-aluminium cavities zangaphakathi, ezinokubonelela ngesiqinisekiso esomeleleyo sokusebenza kwemveliso kunye nozinzo.

Ngokubanzi, umlinganiselo we-voltage VSWP wee-amplifier zeMars RF yi-3, kwaye iimveliso zethu zinomsebenzi wokukhusela i-VSWP. Ngokubona i-VSWR yesiphumo sesignali esivela kwi-amplifier, xa isiphumo se-VSWR sidlula umda obekiweyo, iya kuyinqumla ngokuzenzekelayo isignali yolawulo ye-amplifier ukukhusela i-amplifier kumonakalo obangelwa yi-VSW, nto leyo enokunciphisa umngcipheko womonakalo wenkqubo.

√ I-Broadband kunye namandla aphezulu

√ Ukusebenza kakuhle kakhulu

√ Ubungakanani obuncinci kunye nobunzima obuncinci

√ Ukuphambuka okuphantsi

√ Isinki yobushushu yangaphandle ekhethwayo

√ Ulawulo olwakhelwe ngaphakathi, iisekethe zokhuseleko

√ Ukudluliselwa kwesignali okukhawulezayo, uzinzo oluhle

Ziziphi iingenelo kunye nomahluko phakathi kwee-transistors zeGaN kunye nee-transistors zeLDMOS?

Kunye nophuhliso lwetekhnoloji yonxibelelwano lweselula ye-4G kunye ne-5G, iGaN ikhuthazwe kwizikhululo zonxibelelwano ngenxa yokusebenza kwayo okugqwesileyo kwiimeko zesicelo esisebenza rhoqo. Nangona kunjalo, kwiimeko zesicelo esisebenza rhoqo esiphantsi nesiphakathi, i-LDMOS iselukhetho oluphambili ngenxa yeenzuzo zayo zexabiso eliphantsi, ukuhlanganiswa okuphezulu, kunye ne-DPD enobuhlobo ngakumbi (Digital Pre-Distrotion).

Ngokusekelwe kwiingenelo zazo, iindawo eziphambili zokusetyenziswa kwe-LDMOS kunye ne-GaN zahlukile, i-GaN igxile kakhulu kwiimeko zamandla aphezulu, ngelixa i-LDMOS igxile kakhulu kwiimeko zamandla aphantsi naphakathi, kwaye nakwezinye iimeko zamandla aphantsi aphezulu zinezicelo. Nangona kunjalo, ukhetho phakathi kwe-LDMOS kunye ne-GaN alunakulungiswa kwaye luhlala lutshintsha ngokwesicwangciso somenzi.