EW
Radar
Test and Measurement
Communication
State-of-the-art Power Performance RF Broadband High Power Amplifiers MM60180P45B
Product introduction
The model MM60180P45B is a multi-octave high power amplifier operating between 6 GHz and 18 GHz and offering a wide dynamic range with 30 Watts typical power. This class AB power amplifier is suitable for C, X, Ku-band applications, which are mainly used in the radio communications, radar, satellite communications, test and measurement markets.
Mars RF's GaN power amplifiers have the advantage of receiving and outputting a stable signal with an input return loss of -10dBc. The wideband RF amplifier can be well connected to the RF systems, the high power amplifier adopts the industry standard impedance, the impedance value is 50 ohms.
The broadband RF product is characterized by its small size and high power, with dimensions of 150x90x30mm (5.90x3.54x1.18inch), and a light weight of 1.0kg (2.2Ibs) for an RF amplifier of its power class.
The employment of gallium nitride (GaN) and chip-and-wire technology in manufacturing can support greater gain in RF amplifiers. GaN is rapidly becoming the semiconductor material of choice for many transistor applications, and with its excellent thermal performance, it has the GaN is rapidly becoming the semiconductor material of choice for many transistor applications, where the material's excellent thermal performance and its strengths support critical RF needs such as high gain values, low power consumption, and high throughput.
GaN transistors have proven to be reliable, efficient, and effective materials that work well in harsh environments. GaN power amplifier have also made a significant impact in the communications industry due to their fast switching capability and small, lightweight, durable design.
This wideband RF power amplifier has a compact modular design and a built-in control and protection system that monitors and protects the circuits and facilitates the long-term use of the product.
High-quality heat sinks enable the RF power module to maintain high performance under various conditions, and we are able to provide consumers with optional heat sinks, and customers can contact us at any time upon request.
Key Features
• Small Size and light weight
• Instantaneous ultra-broadband
• 50 Ohms input and Output matched
• Built-in control and protection circuits
FAQ
What makes us confident in our ability to supply?
We have established a very comprehensive supplier management system, a rigorous assessment of supplier qualifications and localization of suppliers. This enables us to better control the quality of raw materials for production and reduce quality risks. Moreover, we are able to procure raw materials for production as soon as possible, which greatly contributes to the shortening of RF product delivery time. (Supplier localization means that almost all of Mars RF's transistors and parts suppliers are from China, and there is no shortage of goods due to national policies).
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Picture
Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30