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Ruggedized design: RF High Power Amplifier Systems MPS90100P50A

Model No. : MPS90100P50A

Mars RF's high power RF amplifier system, MPS90100P50A, operates at 9000 - 10000 MHz with an output power of 100 Watts. This Class AB amplifier is designed for a 50 ohm input/output impedance and offers high efficiency, operating over a wide dynamic range with impressive typical performance.

  • Start 9000 MHz
  • Stop 10000 MHz
  • Pout 100 Watts
  • Gain 50 dB
  • Voltage 100~260VAC
  • Mode Pulse
  • Size 19'', 2U

Product introduction

The MPS90100P50A is a rack-mountable unit incorporating a universal voltage power supply. It operates in the RF signal frequency range 9000 - 10000 MHz with a pulse width of 10 μs and a duty cycle of 10%.
The input/output connector type of this rack-mounted device is N-type, which is a medium-power connector with threaded connection. The use of N-type connectors in this RF amplifier can effectively improve the reliability and vibration resistance, N-type connectors also have excellent mechanical and electrical properties, widely used in vibration and harsh environmental conditions of radio equipment and instruments and terrestrial transmitting systems to connect RF coaxial cables.
This frequency amplifier has an operating temperature range of -10 degrees Celsius to 40 degrees Celsius, and can be stored at -20 degrees Celsius to 45 degrees Celsius and 95% relative humidity (non-condensing), when the ambient temperature is higher than 40 degrees Celsius, the power of the device will be slowly reduced, with a thermal overload protection function.
This rack-mountable unit is paired with a built-in forced air-cooled cooling system. Our high-quality cooling system enables the unit to maintain excellent performance under a variety of conditions for long runs and harsh environments.
The RF amplifier subsystem utilizes GaN power devices, which offer excellent power density, high efficiency, low distortion and wide dynamic RF signal range, greatly improving the overall energy efficiency of the system.
Built-in RF detector control circuits help these SSPA amplifier systems operate under any fault conditions such as overdrive, load mismatch and thermal overload.
This RF amplifier design utilizes an advanced broadband RF matching network, combining technologies and qualified components, resulting in further improvements in both power consumption and performance, with field-proven stable and reliable performance.

Key features

√ Digital interface option 
√ Compact and robust design 
√ Instantaneous ultra-broadband 
√ Pulse width/duty cycle protection 
√ Unconditional stability and ruggedness

Mars RF's assembly capabilities

Mars RF has its own micro-assembly technology department, which is conducive to ensuring the consistency of our high-frequency, high-output power amplifiers.
Mars RF's 100,000-class micro-assembly clean room can ensure that each of our products has excellent performance. In this high-tech production workshop, we adopt advanced air purification technology and strict cleanliness standards, which can effectively filter and remove the tiny particles in the air, ensuring that the production environment of micro-assembly products reaches the best state.

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Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
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1000
200
53
28
CW
200x150x25
RF Broadband High Power Amplifiers KB002052M47A
RF Broadband High Power Amplifiers KB002052M47A pdf
800
1000
200
53
28
CW
200x150x25
Get QuoteStock : 7
RF Broadband High Power Amplifiers KB0001003M53A
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30

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