For C-band, X-band, and Ku-band applications, the RF ultra-broadband high-power gallium nitride (GaN) amplifier is suitable and perfect, with a minimum operating frequency of 6000 MHz and a maximum working frequency of 18000 MHz. At saturation, it typically has a 40 dB power gain and 10 watts of output power. When the output power is 5 Watts, the harmonics of this GaN power amplifier can reach -20 dBc. In practical terms, this specification indicates the amplifier's ability to suppress the generation of unwanted harmonic signals, ensuring that the output is predominantly composed of the intended fundamental frequency with minimal interference from harmonic components. The input/output impedance of this wideband amplifier is 50 Ohms.

Mars RF has established its own product quality control system and complete production process to ensure that its products have very good performance and service life. Therefore, we provide a three-year warranty with the first 18-month free warranty. During the warranty period, if there are any after-sales problems caused by the quality of the product itself, we provide free replacement service.

√ Ultra-broadband 

√ Class AB

√ GaN amplifier

√ Built-in control 

√ C/X/Ku band

√ RF power amplifier design

√ Light weight

1.The advantages of GaN device in the power amplifier?

Using GaN (Gallium Nitride) devices in power amplifiers offers several advantages:

High Power Density: Compared to more conventional technologies like silicon-based devices, GaN devices are capable of a higher power density. Because of this, they may provide greater power in a smaller package, which makes them perfect for high-performance, compact applications.

High Efficiency: When compared to other semiconductor technologies, GaN devices usually show better efficiency values