EW
Radar
Test and Measurement
Communication
RF Pulsed High Power Amplifiers MPM2731P60A
Product introduction
This RF pulsed high power amplifier is capable of amplifying signals up to 1000W typical saturated output power over its entire operating frequency range of 2700MHz – 3100MHz. The employment of advanced pulsed high power devices in manufacturing ensures this module exceptional power performance, long term reliability and high efficiency. This pulsed high power amplifier suitable for high power RF, MF & HF & VHF pulsed applications. Mars RF’s Pulse high power amplifier has the characteristics of high gain, wide bandwidth, low distortion, high stability, fast response time, etc., and is mainly used in the field of radar. The gallium arsenide metal transistor used in this pulsed high power amplifier. Gallium arsenide (GaAs) has the characteristics of high frequency, high electron mobility, high output power, high linearity and low noise, and has a wide range of applications in the fields of optoelectronics and radio frequency. Mars RF’s pulsed high power amplifiers suitable for high-frequency and high-current applications. And our pulsed amplifier has high efficiency and good linearity indicators. The radio frequency power amplifier composed of it often works in a Class A state.
Key Features
√ Pulased High Power Amplifier ,1000Watts typ
√ High Efficiency
√ Low Distortion
√ GaN High Power Amplifier
√ Built-in over-temperature protection, over-current protection and over-voltage protection.
Why did Mars RF adapt GaN technology ?
GaN is quickly becoming the semiconductor material of choice for many transistor applications. GaN has high electron mobility, supports greater gain at higher frequencies, and is more efficient than equivalent LDMOS (Laterally Diffused MOSFET) technology. GaN also has high activation energy, resulting in excellent thermal properties and significantly higher breakdown voltage. Advantages of gallium nitride transistors also include higher power density, higher breakdown voltage, higher thermal conductivity and lower power requirements. These advantages result in higher efficiency (even at higher frequencies), smaller form factor, lower overall system rating, higher reliability and best-in-class performance. The use of GaN transistors supports critical RF requirements such as high gain, low power consumption, high throughput and extremely fast switching speeds.
FAQ
1.What is the production capacity of Mars RF?
Mars RF has 10 production lines and automatic testing platform. These standardized production lines ensure our production efficiency and allow our production capacity to reach 2200pcs per month.
2.Mars RF’s high power amplifiers support which kind of modulation ?
Mars RF’s high power amplifiers support modulations including AM, FM, Multi-tone, Pulse.
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Picture
Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30