Leave Your Message

RF Narrowband High Power Amplifiers MM2425P50B

Model No. : MM2425P50B

Mars' RF narrowband high power amplifier MM2425P50B is operating between 2.4 - 2.5GHz with output power 200W. Its typical spurious value is -60dBc, and its harmonic values are -30dBc.

  • Start 2400 MHz
  • Stop 2500 MHz
  • Pout 100 Watts
  • Gain 50 dB
  • Voltage 28 V
  • Current 13 Amp
  • Mode CW
  • Size 170x130x30 mm

Product introduction

The model MM2425P50B is a narrowband high power amplifier operating between 2.4GHz and 2.5GHz and offering a dynamic range with 200 Watts typical saturated power. The RF narrowband high power amplifier has a typical spurious value of -60dBc and a harmonics value of -30dBc, and the input return loss design of this amplifier guarantees that the typical value of -10dB can be achieved. If you need better return loss data, please consult our team. This narrowband high power amplifier has the characteristics of small size, light weight, high power, detailed dimensions are 170×130×30 mm and the weight is 2.0 kg. This kind of amplifiers can be used in applications with high requirements for product size and weight. The impedance of this narrowband high power amplifier is 50 Ω with operating voltage 28 Volt. 
Mars RF has its own micro-assembly technology department, which greatly guarantees the consistency of our high frequency and high output power products. Micro-assembly technology is a comprehensive application of high-density interconnect substrate technology, multi-chip component technology, system/subsystem assembly technology, 3D assembly technology and other key process technologies, to assemble various miniature components (integrated circuit chips and chip components) that constitute electronic circuits. Advanced electronic assembly technology for high-density, high-performance, highly reliable, micro-miniature and modular circuit products that form 3D structures. An important technical approach to achieve the goals of miniaturization, lightweight, high-density 3D interconnect structure, wide operating band, high operating frequency and high reliability of electronic equipment".

Key Features

√ High Efficiency with Psat 200 Watts typical
√ Over-temperature protection
√ Optional external heatsink 
√ Compact design with maxium size 170×130×30mm
√ Light Weight with maxium 2.0 kg

FAQ             

1. What is the difference between a class A and a class AB amplifier?
The difference refers to how the RF semiconductors are biased. A Class A amplifier will provide very linear amplification at the cost of very low DC to RF efficiency, which translates directly into heat and size of the amplifier system. A Class AB amplifier is a compromise of good linearity, high efficiency and small size.

May We Also Suggest

Picture
Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
800
1000
200
53
28
CW
200x150x25
RF Broadband High Power Amplifiers KB002052M47A
RF Broadband High Power Amplifiers KB002052M47A pdf
800
1000
200
53
28
CW
200x150x25
Get QuoteStock : 7
RF Broadband High Power Amplifiers KB0001003M53A
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30

Leave Your Message