Model MPM90100P50A is an X-band high power pulsed amplifiers operating in the 9 to 10 GHz frequency range and offering pulsed width up to 100μs with duty cycle up to 15%. The high power pulsed amplifiers provides in excess of 100Watts peak output power into a 50 Ohm load. The employment of gallium nitride (GaN) and chip-and-wire technology in manufacturing ensures this module state-of-the-art power performance with excellent power-to-volume ratio. GaNs have high electron mobility and support greater gain at higher frequencies. GaN also has a high activation energy, resulting in excellent thermal properties and significantly higher breakdown voltages. The advantages of gallium nitride transistors also include higher power density, higher breakdown voltage, higher thermal conductivity, and lower power requirements. These benefits can lead this high power pulsed amplifiers have higher efficiency (even at higher frequencies), smaller form factors, lower overall system grades, higher reliability, and best-in-class performance.

What’s more, this high power pulsed amplifiers require heat dissipation at operating temperatures of 85 degrees Celsius and restart at 60 degrees Celsius instead of shutting down. Mars RF have cooling equipments, customers can buy it with high power pulsed amplifiers together. Our high quality cooling equipment enables power amplifiers to maintain high performance in all conditions, reducing the frequency and cost of system maintenance. It is ideal for high power pulse amplifiers applications for Radar module, satellite communication and other fields.

Mars RF's high power pulsed power amplifiers are available for Radar application with frequency ranging from HF to Ku band and output power from serveral watts to kilo-watts. These SSPA are designed with state-of-the-art power devices providing excellent performances in terms of high-efficiency, high-reliability, good linearity lighter weight, and smaller size.

√ Small Size and light weight

√ Power added efficiency >10%

√ Over-temperature protection

√ Forward and reflected power coupling ports

√ Compact design with maxium size 200×125×25mm

√ Light Weight with maxium 3.0 kg

√ Pulse width/ duty cycle protection

√ Over voltage, and over current protection

1.How much input power is needed for the amplifier?

Please refer to the Specification Sheet for the particular amplifier in question. If you have any further questions, please contact us.

2.What is the role of transistors used in power amplifiers

RF power amplifier is an energy converter, the reason why it can amplify the signal, because it can convert the power supplied by the DC power supply into the output signal power. And the core component to complete this function is the transistor. Therefore, the selection of transistors for the design of the RF power amplifier performance is crucial.