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RF High Power Amplifier Subsystems MS80120P50A
Product introduction
The gan RF power amplifier MS80120P50A is a rack-mountable unit with a universal voltage power supply and built-in forced air cooling. The radar amplifier subsystem uses advanced GaN power devices with excellent power density. Through robust engineering, advanced broadband RF matching networks, combination technology and qualified components, the RF high power amplifier system consistently deliver reliable performance. The class b RF amplifier system works in the UHF band, uses advanced GaN tubes, has an operating voltage requirement of 220 Volts, and an operating voltage range of 180 to 240 Volts. This solid state RF power amplifier subsystems has built-in safety controls to protect the circuit and improve safety. Mars RF's sspa power amplifier subsystems MS80120P50A uses an N-type connector, which is a threaded medium power connector with high reliability, strong vibration resistance, and excellent mechanical and electrical performance. It is widely used in wireless equipment and instruments under harsh vibration and environmental conditions, as well as in ground transmission systems to connect RF coaxial cables.
Key Features
• Instantaneous ultra-broadband
• Suitable for CW, AM, and FM modulation type
• Compact and robust design
• Standard front panel manual gain adjustment
How do we ensure quality control?
Each Mars RF class AB RF amplifier subsystem undergoes a series of power amplifier testing by using state-of-the-art fully automated test equipment to ensure accuracy and efficiency, including:
- 12 hours aging test at full power and room temperature
- Temperature and cycle testing range -55°C to 85°C, 5 cycles total
- life span test
We also cater to our customers' special requirements by offering optional tests such as vibration and shock testing, power amplifier market.
FAQ
How to choose the right high power microwave amplifier Subsystem for your specific needs?
There are some details for you to reference, or you can just send your demands to us, we will reply you on the same day.
1. Range: Ensure that the amplifier subsystem operates within the frequency range of your application.
2. Power Output: Determine the required output power level for your application, including peak power and average power requirements.
3. Gain: Consider the required gain of the amplifier system to achieve the desired output power level.
4. Size and Form Factor: Consider the size and form factor of the amplifier system to ensure it fits within your system and meets any space constraints.
5. Cooling Requirements: Assess the cooling requirements of the amplifier system, especially for high-power applications, to prevent overheating. This RF High Power Amplifier Subsystems MS80120P50A adopt built-in internal forced air cooling system.
By carefully considering these factors, you can select an RF high power amplifier subsystem that best suits your specific needs. If you have special requirements for some parameters of the sspa microwave subsystem, Mars RF supports customization. Please let us know your requirements, after discussed with the designer, we will as soon as possible to get back to you.
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Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30