The RF high power amplifier system MS0527P49A from Mars RF Microwave is a rack-mountable unit incorporating a universal voltage power supply and a built-in forced air-cooling amplifier system. This high power amplifier system operates from 500 MHz to 2700 MHz. It can handle an input power of up to 80 W and has a 50 Ohm input/output impedance. Mars RF's high power amplifier system can operate at temperatures from below zero to high temperatures, and can be stored at temperatures from below zero to high temperatures. Relative humidity below 95% can work normally, suitable for most areas. This high power amplifier is suitable for multi-octave bandwidth high power CW, modulated, and pulse applications. The high power amplifier is constructed within a single 4RU drawer including the forced air-cooling. Due to robust engineering and employment of advanced broadband RF matching networks, combining techniques and qualified components, the high power amplifier system achieves consistent performance with field proven reliability. 

This high amplifier system utilizes GaN power device that provides excellent power density, high efficiency, low distortion and wide dynamic range. Gallium nitride transistors can handle a wider temperature range than conventional transistors and work well in harsh environments, making them ideal for RF applications. Due to robust engineering and employment of advanced broadband RF matching networks, combining techniques and qualified components, the amplifier achieves consistent performance with field proven reliability.

Mars RF has 10 production lines, two of which are clean room production lines. These standardized production lines not only ensure our high power amplifier system efficiency, and also achieve fast delivery. At the same time, the dust-free production line can also meet the high standard delivery requirements of customers. If the customer's project has requirements for product coefficients, quality control and other aspects, Mars RF can provide customized functions, and we will try our best to meet the customer's requirements.

√ GaN high power amplifier systems

√ Instantaneous ultra-broadband

√ Suitable foe CW, AM, and FM modulation type

√ Compact and robust design with maxium size 483×177×444mm

√ Standard front panel manual gain adjust

√ Unconditional stability and ruggedness

1.What is the lead time for the product?

The lead time is 2-8 weeks. With inventory available, the lead time for finished products is around 2-3 weeks, and for semi-finished products it is around 2-4 weeks. Usually, we have sufficient inventory to meet your needs. 

2.What’s the difference between a high power amplifier module and a high power amplifier system?

A RF module is an individual RF Amplifier, which need to connect with external power supply and heat sink etc. A System is made up of many RF modules,  AC to DC power, front and rear panels close connectors and cooling system.