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RF High Power Amplifier Subsystem MS2060P45A

Model No. : MS2060P45A

Mars RF's high power amplifier subsystem MS2060P45A is operating between 2000 - 6000MHz with output power 35W. Mars RF provides ultra-broadband high power amplifier systems in rack-mounted configuration with output power capacity from 50-Watt to 2000-Watt for many applications.

  • Start 2000 MHz
  • Stop 6000 MHz
  • Pout 35 Watts
  • Gain 45 dB
  • Voltage 100-260VAC
  • Mode CW/FM/AM
  • Size 19", 2U

Product introduction

The high frequency RF amplifier MS2060P45A is a rack-mountable unit incorporating a universal voltage power supply and a built in forced air-cooling system. This high power amplifier subsystem utilizes gallium nitride technology that provides excellent power density, high efficiency, low distortion and wide dynamic range. Moreover, the input return loss design of this high power amplifier system is guaranteed to be -10dB typical. If you need better return loss data, please consult our team. And it has a powerful structure and built-in control, monitoring and protection circuits. Besides, this high power amplifier subsystem operating temperature can range from -10 degrees Celsius to minus 40 degrees Celsius. The storage temperature can also meet -40 degrees Celsius to 85 degrees Celsius. And the relative humidity of this high frequency of power amplifier system can work normally below 95%. Therefore, it adapts to most of the regional environment. If customers have any other requirement of the parameters and quality testing for one high power amplifier system, please contact us. We will try our best to make you satisfy.
Mars RF has its own micro-assembly technology department, which ensures the consistency of our high-frequency and high-output power microwave amps. Micro-assembly technology is an advanced electronic assembly technology that comprehensively applies key process technologies such as high-density interconnection substrate technology, multi-chip component technology, system/subsystem assembly technology, and 3D assembly technology to assemble various micro-components (integrated circuit chips and chip components) that constitute electronic circuits to form a 3D structure of high-density, high-performance, high-reliability, micro-miniature and modular circuit products. It is an important technical way to achieve the goals of miniaturization, lightweight, high-density 3D interconnection structure, wide operating frequency band, high operating frequency and high reliability of electronic equipment.
In accordance with the high standard, Mars RF has established a strict and high-standard product quality control system and production process quality management system to ensure that each product of Mars RF has better performance and more reliability.

Key Features

• GaN high power amplifier system
• Instantaneous ultra-broadband
• Suitable for CW, AM, and FM modulation type
• Compact and robust design
• Standard front panel manual gain adjust
• Forced air-cooling system

FAQ                   

1.Where are the Mars RF products manufatured?
Mars RF designs and manufactures its products in China. Our supply chain is localized. Almost all of Mars RF's pipe and parts suppliers come from China, so there will be no supply shortage caused by national policies, which ensures the normal delivery time of our products.
2.What’s the warranty about this high power amplifier Subsystem?
Mars RF warrants each new product against defects in materials and workmanship for 3 years after goods invoice date. Mars RF is not responsible for product damage resulting from accident, misuse or lack of reasonable care.

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Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
800
1000
200
53
28
CW
200x150x25
RF Broadband High Power Amplifiers KB002052M47A
RF Broadband High Power Amplifiers KB002052M47A pdf
800
1000
200
53
28
CW
200x150x25
Get QuoteStock : 7
RF Broadband High Power Amplifiers KB0001003M53A
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30

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