Broadband Amplifier
Narrowband Amplifier
Pulse Amplifier
RF Amplifier Subsystem
RF Circulator
Radar
EW
Test and Measurement
Communication
RF High Power Amplifier Subsystem MPS2731P57A
Product introduction
The MPS2731P57A is a 500 Watt, rack mountable high voltage solid state RF amplifier subsystem designed to operate over the frequency range of 2700 MHz to 3100 MHz with a gain of 57dB. This high output amplifier system utilizes GaN power device. GaN have high electron mobility, support greater gain at higher frequencies, and are more efficient than the equivalent LDMOS (transverse diffusion MOSFET) technology. GaN also has a high activation energy, resulting in excellent thermal properties and significantly higher breakdown voltages. The advantages of gallium nitride transistors also include higher power density, higher breakdown voltage, higher thermal conductivity, and lower power requirements. Due to robust engineering and employment of advanced broadband RF matching networks, combining techniques and qualified components, the mw amplifier system achieves consistent performance with field proven reliability. The Chinese amplifier system MPS2731P57A is a self contained units consisting of the RF amplifier, AC to DC power supply, front- back panel shut down connector and cooling system.
Mars RF is a high power RF amplifier manufacturers. There are a wide selection of radio frequency RF systems products stocked to be highly available due to 12 production lines and automatic test platform that ensures quick-turn delivery. Mars RF MPS2731P57A Quality Assurance Program assures consistent performance and the highest reliability.
Key Features
• GaN high power amplifier system
• Lighter weight
• High Efficiency with Pout 500 Watts typ
• Over-temperature protection
• Compact design with maxium size 483×177×445mm
• Built-in internal forced air cooling system
How do we control the quality?
Each high power amplifier system of Mars RF have to take through the following test with the state-of-the-art fully automatic testing equipments to make sure the accuracy and efficiency is right.
● Each high power amplifier systems have take burn-in test with 12 hours of continuous operation at full power at room temperature.
● Each high power amplifier systems have take temp & cycling test from -55℃ to 85 ℃, 5 cycles in total.
●Each high power amplifier systems have take life Testing.
We try our best to support customers with special requirements in other optional test like vibration/ shock test.
FAQ
1.Where are the Mars RF products manufatured?
Mars RF designs and manufactures its products in China. Our supply chain is localized. Almost all of Mars RF's transistors and parts suppliers come from China, so there will be no supply shortage caused by national policies, which ensures the normal delivery time of our products.
2.Can the product parameters be changed according to the customer’s needs?
Mars RF's purpose is “Focus on your application.” If you have special needs, please contact us with the specific parameter information, we support customized production. After communicating with the engineer, we will reply to you immediately.
May We Also Suggest
Picture
Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30