Although the solid state RF amplifiers can perform well in the SHF frequency band, the minimum operating voltage only needs to meet 26 volts, which is below 32 Volts, and the typical voltage is around 28 volts. The 8-12G broadband power amplifier is suitable for the X-band and has excellent performance in fields such as radar and satellite communication and so on. 

GaN transistors, which have proven to be reliable, efficient, and effective, are used in this class a amplifier, and GaN is fast becoming the semiconductor material of choice for many transistor applications. GaN has high electron mobility, supports greater gain at higher frequencies, and has higher efficiency compared to equivalent LDMOS (laterally diffused MOSFET) technology. The advantages of GaN transistors also include higher power density, higher breakdown voltage, higher thermal conductivity, and lower power requirements. These benefits can lead to higher efficiency (even at higher frequencies), smaller form factors, lower overall system ratings, higher reliability, and best-in-class performance. GaN also has a high activation energy, resulting in excellent thermal performance and a significantly higher breakdown voltage. GaN transistors can handle a wider temperature range than conventional transistors and work well in harsh environments, making them ideal for RF applications. The class ab power amplifier efficiency design is thermally simulated and the cavity is made of aluminum, which is more durable and robust than other materials. All of these excellent device set-ups result in a solid state power amp that produces better efficiency, with a typical efficiency of 11%.