The frequency amplifier MM20180P37D is a multi-octave class AB power amplifier operating between 2 GHz and 18 GHz and offering a wide dynamic range with 5 Watts typical saturated power. The input return loss design of this solid state RF amplifier guarantees a typical value of -10dB, if customers need other better return loss data, please consult our team. And this high frequency power amplifier can be well integrated into the power system because the RF product uses the industry standard impedance. Also the operating voltage and current of this RF signal amplifier are typical values of 28V and 2Amp respectively. Besides, the RF power module’s operating temperature can range from -40 degrees Celsius to 60 degrees Celsius. The storage temperature can also meet -45 degrees Celsius to 85 degrees Celsius. And the relative humidity can work normally below 95%. Therefore, this microwave power module adapts to most of the regional environment. It is ideal for multi-octave broadband high power RF C&Ku applications.

In addition, Mars RF has its own micro assembly technology department, which greatly ensures the consistency of our high-frequency and high output RF power amplifiers. Micro assembly technology is an advanced electronic assembly technology that comprehensively applies key process technologies such as high-density interconnect substrate technology, multi chip component technology, system/subsystem assembly technology, 3D assembly technology, etc. It is an important technological approach to achieve the goals of miniaturization, light weighting, high-density 3D interconnect structure, wide operating frequency band, high operating frequency, and high reliability of electronic equipment.

Finally, Mars RF has established a strict and high standard RF product quality control system and production process quality management system in accordance with high standard, which ensures that every solid state power amplifier has better performance and is more reliable.

√ Broadband high power amplifier

√ Over-temperature protection

√ High Efficiency

√ Light Weight with maxium 1.2 kg

√ Compact design with maxium size 80×80×22mm

√ Low Distortion

1.What is the role of transistors used in power amplifiers?

RF power amplifier is an energy converter, the reason why it can amplify the signal, because it can convert the power supplied by the DC power supply into the output signal power. And the core component to complete this function is the transistor. Therefore, the selection of transistors for the design of the frequency amplifier performance is crucial.

2.How much input power is needed for this broadband high power amplifier?

Please refer to the data Sheet for the particular SSPA amplifier in question. If you have any further questions, please contact us.