GaN Broadband Amplifier MM0727P49A

The GaN Broadband Amplifier MM0727P49A is a multi-octave high power amplifier operating between 0.7 GHz and 2.7GHz and offering a wide dynamic range with 80 Watts typical saturated power. The input return loss design of this GaN Broadband Amplifier guarantees a typical value of -10dB, if customers need better return loss data, please consult our team. Besides, this CW GaN Broadband Amplifier uses SMA female connectors, which have the advantages of wide frequency band, excellent performance, high reliability, and long service life. And has a powerful structure and built-in control, monitoring and protection circuits.

The employment of gallium nitride (GaN) and chip-and-wire technology in manufacturing ensures this GaN Broadband Amplifier has high electron mobility, supporting greater gain at higher frequencies. The advantages of gallium ntride technology transistors also include higher power density, higher breakdown voltage, higher thermal conductivity, and lower power requirements. These benefits can lead to higher efficiency (even at higher frequencies), smaller form factors, lower overall system ratings, higher reliability, and best-in-class performance.ate-of-the-art power performance with excellent power-to-volume ratio. This power amplifier uses ideal for jamming, EMC, test and measurement application.

Relying on various automated test platforms, Mars RF can comprehensively and accurately perform test tasks, ensure data traceability, and avoid errors and errors that may be caused by human operation, thereby improving the accuracy and reliability of testing. Because it adopts an unattended design, it can be tested continuously without manual intervention, reducing human error and greatly improving testing efficiency. In addition, the automated GaN Broadband Amplifier testing platform also has the function of automatically identifying errors, which can quickly identify errors and provide detailed error information to help developers quickly locate and fix problems. This automated error identification and handling mechanism greatly shortens the time to solve problems and improves development efficiency.

√ Instantaneous ultra broadband

√ Over-temperature protection

√ 50 Ohms input and output matched

√ Compact design with maxium size 180×90×25mm

√ Light Weight with maxium 2.0 kg

√ Built-in control and protection circuits

1.What is the difference between a class A and a class AB amplifier?

The difference refers to how the RF semiconductors are biased. A Class A amplifier will provide very linear amplification at the cost of very low DC to RF efficiency, which translates directly into heat and size of the amplifier system. A Class AB amplifier is a compromise of good linearity, high efficiency and small size.

2.How about warranty?

Mars RF warrants each new product against defects in materials and workmanship for 3 years after goods invoice date. Mars RF is not responsible for product damage resulting from accident, misuse or lack of reasonable care.