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Mars RF Broadband Amplifier-MM0527P47A.png

RF Broadband Amplifier MM0527P47A

Model No. : MM0527P47A

The size of RF broadband amplifier MM0527P47A is very small, as 162.56x86.36x25mm, and very light weight, as only 0.8kg. These features indicates this RF broadband amplifier can perfectly match all power systems. The RF broadband amplifier working frequency range is from 500MHz to 2700MHz, belonging to the ultra-high frequency range. This RF broadband amplifier can be used in the P, L, and S bands and is widely used in industries such as television broadcasting, wireless telephone communication, wireless networks, radar systems, etc.

  • Start 500 MHz
  • Stop 2700 MHz
  • Pout 50 Watts
  • Gain 47 dB
  • Voltage 28 V
  • Current 6 Amp
  • Mode CW
  • Size 150x90x25 mm
  • Stock
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product details

Product introduction

After rigorous testing by Mars RF, this 50w RF broadband amplifier MM0527P47A can operate at low temperatures of -40 ° C and operate normally at temperatures below 60 ° C. Maintaining storage temperatures between -45 ° C and 85 ° C is not a problem, as detailed data icon information can be found in the data sheet. This RF broadband amplifier can achieve a gain of 47dB, which can reach a stable output power of 50watts. Relatively, the stray and harmonic values of this RF broadband amplifier are also very excellent, with stray values of -70 dBc and harmonics up to -12 dBc. This RF broadband amplifier uses gallium nitride tubes to ensure a relatively stable gain curve, so the in/out impedance value of the RF broadband amplifier can be stable at 50 Ω typical value, and the input return loss can be stable at -10 dB typical value. In RF broadband amplifiers areas, the efficiency of this product is very impressive, with over 29% high efficiency, which can maximize the continuous operation of the system with very low losses, making your power system more stable and high efficiency.

Key Features

√ Broadband & High power
√ High Efficiency
√ Great Linearity
√ Small Size & Light Weight
√ Low Distortion

FAQ                  

What are the advantages of using GaN transistors in RF broadband amplifiers?
GaN tubes have a wide range of RF broadband amplifier’s applications in recent years, and are the most commonly used tube material except for LDMOS and GaNs. It has the characteristics of high power density, high efficiency, wide bandwidth, high breakdown voltage, and fast switching speed etc. The detailed situation is as follows:
1. High Power Density: GaN transistors can achieve high power levels with a smaller size compared to traditional technologies like LDMOS or GaAs. in rf to dc converter This high power density is beneficial in applications where space and weight are critical factors.
2. High Efficiency: GaN transistors exhibit higher efficiency compared to other semiconductor materials, such as silicon or GaAs. This leads to lower power consumption and reduced heat dissipation, contributing to overall system efficiency in solid state power amp.
3. Wide Bandwidth: GaN transistors have a wider frequency bandwidth compared to other technologies, making them suitable forclass a power amplifier working applications. This allows for the design of power amplifiers that can operate over a wide range of frequencies without sacrificing performance.
4. Fast Switching Speed: GaN transistors have fast switching speeds, which are advantageous in applications requiring quick on/off times or modulation. This property makes GaN transistors suitable for high-frequency integrated power amplifier operation.

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