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RF Broadband High Power Amplifier Subsystem MS1060P47A

Model No. : MS1060P47A

The RF broadband high power amplifier subsystem MS1060P47A is a rack-mountable unit incorporating a universal voltage power supply and a built in forced air-cooling system. This RF broadband high power amplifier subsystem utilizes gallium nitride technology power device that provides superexcellence power density, high efficiency, low distortion and wide dynamic range. Due to robust engineering and employment of advanced broadband RF matching networks, combining techniques and qualified components, the class B amplifier achieves consistent performance with field proven reliability.

  • Start 1000 MHz
  • Stop 6000 MHz
  • Pout 50 Watts
  • Gain 47 dB
  • Voltage 220 V
  • Mode CW/AM/FM
  • Size 482.6 x 177x 445 mm
  • Weight 35 kg

Product introduction

Mars' solid state RF power amplifier subsystem MS1060P47A has a frequency range of 1-6GHz. It can be used in 1-2GHz, 5-6GHz, 4-6GH and other frequency bands, and can operate well in VHF and SHF. Amplifier high power subsystem MS1060P47A is suitable for L-band and can be widely used for long-distance transmission in wireless communications, such as FM broadcasting, television broadcasting, aviation communications, mobile communications, wireless telephone communications, troposcatter communications, medium-capacity microwave communication and remote detection satellites; also suitable for S and C bands. The main application scope is focused on radar systems, such as navigation, weather forecast, wireless LAN, etc. The input return loss design of this class B amplifier subsystem guarantees a typical value of -10dB, if you need better return loss data, please consult our team. (The better the value of the input echo, it can reduce the reflection of the input signal, the reflection interference of the signal source and the excitation source, and achieve better efficiency.) The solid state power amp MS1060P47A chamber is made of Aluminum material, which is light weight and has preeminent strength to weight ratio, rust prevention, corrosion resistance, and high reflectivity, making it more durable and sturdy than other materials. During power amplifier 50 Watt design, thermal simulation is conducted to select the appropriate material, and then the optimal size of the product is confirmed. The surface treatment methods of the valve power amp can be selected from the following: natural color conductive oxidation, nickel plating, color conductive oxidation, anodizing.

Key Features

√ Instantaneous ultra broadband
√ Suitable for CW, AM, and FM modulation type
√ Compact and robust design
√ Unconditional stablility and ruggedness

FAQ                   

What are the advantages of using GaN tubes in power amplifier products?
GaN (Gallium Nitride) tubes offer several advantages when used in power amplifier products:
1. Increased Efficiency: GaN tubes have lower conduction and switching losses, resulting in higher efficiency and reduced heat generation.
2. Wide Bandwidth: GaN tubes have a wide operating bandwidth, making them suitable for high-frequency applications such as radar, telecommunication, and electronic systems.
3. Improved Thermal Performance: GaN tubes exhibit better thermal conductivity, enabling them to dissipate heat more effectively, leading to improved reliability and longevity.
4. Greater Linearity: GaN tubes provide enhanced linearity at high frequencies, contributing to improved signal fidelity and overall performance.
5. Enhanced Reliability: GaN technology offers improved ruggedness and reliability, making it suitable for demanding environments and extended operational lifetimes.
Overall, GaN have been proven to be reliable, efficient, and effective, with many advantages that cannot be fully listed. The use of GaN in Mars RF power amplifier can greatly enhance the safety, reliability, and practicality of the solid state RF amplifiers.

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Picture
Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
800
1000
200
53
28
CW
200x150x25
RF Broadband High Power Amplifiers KB002052M47A
RF Broadband High Power Amplifiers KB002052M47A pdf
800
1000
200
53
28
CW
200x150x25
Get QuoteStock : 7
RF Broadband High Power Amplifiers KB0001003M53A
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30

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