The MS2060P53A is a rack-mountable unit incorporating a universal voltage power supply and a built in forced air-cooling system. This amplifier subsystem utilizes GaN power device that provides excellent power density, high efficiency, low distortion and wide dynamic range. Due to robust engineering and employment of advanced broadband RF matching networks, combining techniques and qualified components, the amplifier achieves consistent performance with field proven reliability. 

This amplifier uses a gallium nitride solution. Gallium arsenide (GaAs) has the characteristics of high frequency, high electron mobility, high output power, high linearity and low noise. The transistor is the heart of the amplifier, and the transistor used in our solutions have undergone strict parameter comparison and screening. Choose the best, most stable and most stable suppliers to cooperate with. We also signed a strategic cooperation agreement with a transistor supplier which ensures good performance of our products. Mars RF tech team have strong experence in design class A power amplifier circuit/ class B amplifiers/ class AB amplifiers/ Class C amplifiers.

1. Supply chain localization: Mars RF’s chip and parts suppliers are almost all from China, and there will be no supply shortages due to national policies, ensuring the normal delivery of our products.

2. Provide three-year warranty, free within 18 months. During the warranty period, if there is any problem with the product itself, we promise to replace or repair it free of charge.