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MM80120P50BV Broadband RF Power Amplifier

Model No: MM80120P50BV

The wideband RF power amplifier model MM80120P50BV operates from 8 GHz to 12 GHz in the X-band frequency range, delivering a typical RF output power of 100 W with a typical power gain of 50 dB. The amplifier features a 50 Ω input/output impedance, an input return loss of -10 dB, and power gain flatness of ±1.5 dB. With harmonics of -30 dBc and spurious signals of -60 dBc, the amplifier provides stable RF performance across its operating frequency range.

  • Start 8000 MHz
  • Stop 12000 MHz
  • Pout 100 Watts
  • Gain 50 dB
  • Voltage 28 V
  • Current 16 Amp
  • Mode CW
  • Size 180 × 120 × 25 mm

Product introduction

The MM80120P50BV is a wideband solid-state RF power amplifier designed for X-band RF and microwave systems requiring broadband, high-power amplification. Its solid-state architecture provides consistent RF performance across the operating band, making it suitable for integration into demanding RF systems.

Our wideband rf power power amplifier is small in size and lightweight. Its high-performance module brings a compact design that is unparalleled in this power class, along with high robustness, reliability and excellent harmonic characteristics. It also boasts high system configuration and operational settings flexibility. The employment of advanced high-power devices in manufacturing ensures this rf amplifier module exceptional power performance, long term reliability and high efficiency. The rf power module amplifier are rugged enough to handle short circuiting at the RF end or an open RF output. Our wideband rf power amplifiers are in great demand in areas such as wireless communications, test, radar and scientific research.

Compared with the previous design, the amplifier features a lighter and more efficient configuration, with an efficiency improvement of approximately 15% and a module weight of only about 1.5 kg. The compact design helps reduce system size and weight while maintaining high RF output power across the full 8–12 GHz frequency range.

For reliable system operation, the amplifier incorporates voltage, current, and temperature protection, together with forward and reflected power detection functions for real-time operating status monitoring. These capabilities improve system reliability and simplify integration into high-power RF equipment. With its combination of broadband coverage, high output power, improved efficiency, lightweight construction, and integrated monitoring and protection functions, the MM80120P50BV is well suited for electronic warfare, RF jamming, and radar applications.

Key Features

√ Broadband & High Power

√ Compact & Lightweight Design

√ Efficiency Improved by 15%

√ Voltage, Current & Temperature Protection

√ Forward & Reflected Power Detection

FAQ                   

1.What is the lead time for the product?

The lead time is 2-8 weeks. With inventory available, the lead time for finished products is around 2-3w, and for semi-finished products it is around 2-4w. Usually, we have sufficient inventory to meet your needs, and ensure that you can receive the goods as quickly as possible.

2.What kind of protection do our products offer our customers?

We promise to provide you with return, exchange, maintenance and other services during the 18-month warranty period. Choosing our high power amplifier means you will get more technical support and better after-sales service, which can provide stronger guarantee for rf product performance and stability.

May We Also Suggest

Picture
Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
800
1000
200
53
28
CW
200x150x25
RF Broadband High Power Amplifiers KB002052M47A
RF Broadband High Power Amplifiers KB002052M47A pdf
800
1000
200
53
28
CW
200x150x25
Get QuoteStock : 7
RF Broadband High Power Amplifiers KB0001003M53A
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30

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