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Test and Measurement
Communication
MM60180P51FV Broadband RF Power Amplifier
Product introduction
The MM60180P51FV ultra-wideband high-power RF amplifier operates from 6 GHz to 18 GHz, delivering a typical saturated output power of 120 W and a typical power gain of 51 dB. Its instantaneous ultra-wideband coverage spans the C-, X-, and Ku-bands, making it well suited for electronic warfare, RF jamming, and radar applications. The amplifier provides a typical harmonic level of -20 dBc at 60 W and spurious signals of -60 dBc, supporting stable RF performance across the wide operating frequency range. It operates at a typical supply voltage of 28 V with a DC current of 29 A at saturated output power. The amplifier features an SMA-female RF input, with waveguide or N-type RF output options available for different system integration requirements. An integrated heatsink and forced-air cooling system provides effective thermal management for high-power operation.
Key Features
√ Ultra-broadband
√ Compact & Lightweight Design
√ Integrated Heatsink & Forced-Air Cooling
√ Voltage, Current & Temperature Protection
√ Forward & Reflected Power Detection
√ Waveguide or N-Type Output Options
FAQ
1.Can the control interface be customized?
Yes. The standard unit uses a Hybrid D-Sub 7-pin interface, and RS422 or RS485 can be provided as customization options.
2.What applications is the MM60180P51FV suitable for?
Its ultra-wideband frequency coverage and high RF output power make it suitable for electronic warfare, RF jamming and radar applications.
3.How is the MM60180P51FV cooled?
The amplifier includes an integrated heatsink and forced-air cooling system to support thermal management during high-power operation.
4.Does the MM60180P51FV provide monitoring functions?
Yes. The interface provides temperature sensing, current sensing, forward power sensing and reflected power sensing for system monitoring and integration.
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