RF power amplifier design features: In the frequency range of 2000 MHz to 6000 MHz, Mars' RF rack-mountable broadband power amplifier subsystem MS2060P49A provides up to 80 Watts of typical saturated RF amplifier and 49 dB RF amplifier gain. Harmonics and spurious signals can affect the quality and stability of RF microwave signals. Therefore, During the design and development of this RF rack-mountable high power amplifier subsystem product, Mars, as a RF amplifier manufacturer, used low harmonic and low spurious components and designed a reasonable filter circuit, so that the harmonics of this product can reach -15dBc and the spurious signals can reach -60dBc, offering the rack-mountable high power amplifier subsystem product a unique low distortion, excellent performance and other characteristics. Moreover, the input return loss of this power amplifier subsystem can reach -10 dB typical, which means the attenuation of the signal at the input port is relatively small and more of the signal can be transmitted outward. 

The operating voltage of this rack-mountable high power amplifier subsystem ranges from 180 to 240 Volt with 220 Volt typical and the power consumption @60W CW is realized at 800 Watts typical. The Type-N female connectors are used in RF input/ output, which are suitable for high power and high frequency applications because of its high power resistance. 

Mars' RF rack-mountable high power amplifier subsystem MS2060P49A is suitable for CW(continuous wave), AM(amplitude modulation) and FM(Frequency modulation) modulation type. While designing this subsystem, the engineer fully takes the customers’ needs into consideration. This subsystem has an integrated design that it can be used when plugged in.