The Mars RF's broadband GaN(gallium nitride amplifier) power amplifier MM2040P50AC1 is a multi-octave high power amplifier operating between 2000 MHz and 4000 MHz and offering a wide dynamic range with 100 Watts RF output typical saturated power. This high power RF amplifier offers 50 dB typical power gain with the gain flatness of ±2.5 dB typical. This model is small in size and lightweight. The employment of advanced high power devices in manufacturing ensures this Mars RF's broadband GaN power amplifier module exceptional power performance, long term reliability, low distortion and high efficiency. This GaN amplifier is ideal for multi-octave broadband high power RF applications such as radar, communication, test and measurement etc.  

Based on state-of-the-art GaN power devices, Mars RF, one of the most fast-developing RF amplifier manufacturers designs and manufactures SSPA(solid state power amplifiers ) with excellent performance in terms of high efficiency over ultra-wide working band, high reliability and ruggedness. Moreover, there are a wide selection of radio frequency power amplifier products stocked to be highly available due to 10 production lines and automatic test platform that ensures quick-turn delivery.