High End UAV Swarm Integrated Payload MUSL80
Product introduction
The MUSL80 UAV swarm integrated load has the ability to detect, locate and suppress interference. It can interfere through suppression, deception and combination. After completing remote deployment, it can quickly and autonomously complete networking. The airspace coverage of MUSL80 is -120°~ -60° in azimuth, 60°~120°, and pitch ±30°. The operating temperature can be from minus 40 degrees Celsius to plus 60 degrees Celsius. At 40 degrees Celsius, the relative humidity can work normally below 95%, which is suitable for most regional environments. It has the ability to resist salt spray, mildew and rain. The integrated reconnaissance and interference payload can quickly detect and locate air defense weapon systems, form swarm combat mission planning, coordinate suppression and interference of air defense radar systems, evaluate the interference effect, and form an air "safe corridor" to cover subsequent tasks.
From defense applications to precision agriculture, these drone swarm projects mark the evolution of the technology. Mars RF’s UAV swarm integrated payload have been repeatedly tested. The product performance has been well verified through applications in different fields. Drone swarms operate through a combination of autonomous decision-making, real-time communications, and collaborative algorithms.
Parameters
Working Frequency Band |
0.8-18Ghz |
Maximum Reconnaissance jamming distance |
≤ 80km |
Airspace Range |
-120°~ -60°,60°~120° |
Continuous Operating Time |
≥ 30 mins |
Operating temperature |
-40°C~+60°C |
Storage temperature |
-45°C~ +70°C |
Relative humidity |
≤95% (40°C) |
Key Features
• object: Air defence early warning radar, guidance radar
• Suppression/deception/combination jamming
• Salt spray resistant
Product quality control
Mars RF pays close attention to every single control throughout the whole creation and creation of products process. In order to achieve this, Mars has created a comprehensive set of product quality control procedures based on ISO:9001. Every stage, from choosing the raw materials to deciding on the production procedure, controlling the production process, and finally testing and verifying the final product, is rigorously screened and examined.

FAQ
1.Tell the difference between GaN, GaAs, and LDMOS power devices.
GaN, GaAs, and LDMOS power devices are at the forefront of modern semiconductor technology, each with its unique advantages. GaN devices, for instance, are known for their high power density and efficiency, making them suitable for high-power applications. GaAs devices, on the other hand, offer excellent peRFormance in terms of speed and power consumption, making them ideal for high-frequency applications. LDMOS devices, with their high reliability and low noise characteristics, are often used in amplifiers that require precision and stability.
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Picture
Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30



EW
Radar
Test and Measurement
Communication
