Mars RF's power amplifier MM1017P43A yana amfani da kayan bututu na GaN mai ci gaba, wanda zai iya samun riba na 44dB a nauyin 0.65kg kawai, tare da ƙimar ƙarfin ƙarfin lantarki na 3: 1 da kyakkyawan aiki na -10 dB asarar dawowa. RF ƙananan ƙararrawa amo ya dace da aikace-aikacen band na UHF kuma ana iya amfani dashi ko'ina a cikin cibiyoyin sadarwa mara waya, watsa shirye-shirye, da filayen watsawa mai nisa. Ƙarfin wutar lantarki mai ƙarfi MM1017P43A yana ɗaukar rami na aluminum, wanda aka tsara ta hanyar simintin zafi, zaɓi kayan da ya dace, sannan yana tabbatar da mafi kyawun girman samfurin. Za a iya zaɓar hanyoyin jiyya na saman samfurin daga waɗannan abubuwa masu zuwa: iskar shakawar iskar shaka ta dabi'a, plating nickel, oxidation mai launi, anodizing.

Broadband High Power Amplifiers MM1017P43A ta amfani da GaN transistor ba wai kawai yana da babban motsi na lantarki ba kuma yana goyan bayan riba mai girma a mitoci mafi girma, amma kuma yana da ƙarfin kunnawa mai girma, yana haifar da kyakkyawan aikin thermal da mahimmancin ƙarfin rushewa. Yin amfani da transistor GaN yana goyan bayan mahimman buƙatun RF kamar riba mai yawa, ƙarancin wutar lantarki, babban kayan aiki, da saurin sauyawa cikin sauri. Bututun GaN da aka yi amfani da shi a cikin 20W amp MM1017P43A yana da kariyar lokaci don kunnawa da kashewa, da kuma kariya mara kyau. Gallium nitride transistor na iya ɗaukar kewayon zafin jiki mai faɗi fiye da transistor na gargajiya kuma suna aiki da kyau a cikin yanayi mara kyau, yana mai da su kyakkyawan zaɓi don aikace-aikacen RF. Gallium nitride transistor sun yi tasiri sosai a cikin masana'antar sadarwa saboda saurin sauyawarsu da ƙaƙƙarfan ƙira, nauyi, da ƙira mai dorewa. GaN transistors an tabbatar da su zama abin dogaro, inganci, da inganci.

√ Zane mai ƙarfi

√ Nan take ultra-broadband

√ Karamin girma da nauyi

√ 50 ohm shigar / fitarwa impedance

√ Babban dogaro da karko