EW
Radar
Test and Measurement
Communication
Great linearity RF Pulsed High Power Amplifiers MPM2060P50A
Product introduction
The model MPM2060P50A is a pulsed high power amplifier operating between 2000 MHz and 6000 MHz and offering a wide dynamic range with 100 Watts typical saturated power. It offers 50 dB typical power gain with the input return loss of -10dB. RF amplifier output power at 40 watts has a harmonic value of -10dB. Our RF product enables signals to be transmitted over long distances or to penetrate obstacles in complex environments, improving the system's coverage and communication quality. Our GaN power amplifier is usually designed with resistance to various kinds of interference, including signal distortion and noise, which enables them to maintain signal stability and quality even in complex electromagnetic environments and improves RF systems reliability. You don’t have to worry about the heat dissipation of the pulsed RF power amplifier either, we can provide you with optional external heat sink.
The employment of advanced RF amplifier module in manufacturing ensures this pulsed power amplifier exceptional power performance, long term reliability and high power amplifier efficiency. This SSPA amplifier is ideal for gallium nitride radar, RF jamming, satellite communication, test and measurement etc.
Key Features
• Great linearity&low distortion
• GaN high power amplifier
• High Efficiency with Pout 100 Watts typical
• Over-temperature protection
• Compact design with maximum size 180x110x25mm (7.2x4.33x0.98inch)
• Light Weight with maximum 2 kg (4.4Ibs)
How do we control the quality?
We rigorously test our pulsed high power amplifier for the following:
● Burn-in test with 12 hours of continuous operation at full power at room temperature
● Temp & cycling test from -55℃ to 85 ℃, 5 cycles in total.
● Life Testing
We make every effort to support customers with special requirements in other optional test like vibration/ shock test.
FAQ
1.What applications can this rf product be used in?
Mars RF can provide the most technologically advanced solutions with MPM2060P50A for radar, RF jamming, test and measurement, and other commercial and industrial market. The pulsed high power amplifier is ideal for broadband high-power RF, L&S applications.
2.Advantages of using GaN material for transistors?
GaN power amplifier has high power density; higher efficiency; smaller size and weight, and suitable for TWT replacement, IPA, drive amplifiers, transmitters, radar, EW, RPV, UAV, point-to-point and data link communications.
3.What kind of protection do our products offer our customers?
We promise to provide you with return, exchange, maintenance and other services during the 18-month warranty period. Choosing our products means you will get more technical support and better after-sales service, which can provide stronger guarantee for RF product performance and stability.
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Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30