RF amplifier module MM80120P47C is a multi-octave RF microwave product. It has a wide RF signal range, operates from 8000 MHz to 12000 MHz, and has a typical saturation power of 50 Watts. The high power amplifier has a gain value of 47dB and gain flatness is stable at ±1dB. The excellent test data reflects the wideband RF amplifier's stable signal transmission capability, which reduces the user's effort in commissioning the entire system.

Mars RF's MM80120P47C RF product can be applied in X-band, which is mainly used in radar and satellite communications. Under UHF band, in the application of radar system, this wideband high power amplifier has the advantages of compact structure, light weight, high performance, high system integration, excellent RF performance and low power consumption. In addition, our RF power module are highly flexible and customizable to meet the needs of different industries and applications, providing users with reliable solutions.

Typical operating voltage of this high power amplifier is 28V, power output is 8 Amp DC at 40 W. Input and output connector types are standard SMA, Female. This SSPA amplifier uses Gallium Nitride transistors with internal aluminum cavities, which can provide a stronger guarantee of product performance and stability.

Generally speaking, the voltage VSWP ratio of Mars RF's amplifiers is 3, and our products have VSWP protection function. By detecting the VSWR of the signal output from the amplifier, when the output VSWR exceeds the set threshold, it will automatically cut off the control signal of the amplifier to protect the amplifier from damage caused by VSW, which can reduce the risk of system damage.

√ Broadband & High power 

√ High Efficiency 

√ Small Size and Light Weight 

√ Low Distortion

√ Optional external heat sink

√ Built-in control, protection circuits

√ Fast signal transmission, good stability

What are the respective advantages and application differences between GaN transistors and LDMOS transistors?

Along with the development of 4G and 5G mobile communication technologies, GaN has been promoted in communication base stations by virtue of its excellent performance in high-frequency application scenarios. However, in low and medium frequency application scenarios, LDMOS is still the mainstream choice due to its advantages of low cost, high integrability, and more friendly DPD (Digital Pre-Distrotion).

Based on their respective advantages, the main application areas of LDMOS and GaN are different, GaN is mainly concentrated in high-frequency high-power scenarios, while LDMOS is mainly concentrated in low and medium-frequency scenarios, and also in some high-frequency low-power scenarios have applications. However, the choice between LDMOS and GaN is not fixed and often changes according to the manufacturer's strategy.