Our radio frequency high power solid state amplifier MM1020P53A is constructed for minimum frequency of 1000 MHz and a maximum frequency of 2000 MHz. This RF amplifier includes the following parameters: gain of 53 dB, gain flatness of ±1.5 dB, small signal gain flatness of ±2.5 dB, and return loss of -10 dB. Our solid state amplifiers are characterized by a wide range of coverage, high quality of communication, good signal stability, and quality of the top grade in the process of application. This high power amplifier product uses an SMA female connector as the input connector, an N-type output connector, and 20 amps DC current at 200 watts of power. The DC interface includes a D-Sub 7-pin male connector with current sense and temperature detection.

This RF amplifier module uses Gallium Nitride transistors, which gives our products high power density, high efficiency, smaller size and weight, wide bandwidth, and lower cost/watt for TWT replacements, drive amplifiers, radar, E point-to-point and datalink communications. This Class AB amplifier is assembled in high density and offers the advantages of high operating frequency, high reliability, miniature form factor and modular functionality. The RF design is therefore flexible and highly usable, making it the user's first choice. Built-in RF power detection circuitry effectively resolves overdrive, load mismatch and thermal overload faults that may occur in the RF amplifier and restores it to normal operation.

By using advanced broadband RF matching network and combining techniques, EMI/RFI filters, machined housings and qualified components, excellent performance, long-term reliability and high efficiency of wideband high power amplifiers are achieved.

√ Broadband & High power 

√ High Efficiency 

√ Great Linearity 

√ Small Size & Light Weight 

√ Built-In Control and Protection Circuits 

√ CLASS AB