Mars rf broadband amplifier MM2080P48AV is a 60W S/C-band GaN power amplifier designed specifically for radar systems applications. Operating from 2000 to 8000 MHz, it achieves 48 dB gain with a power gain flatness of ±2 dB. Manufactured using Mars RF's GaN-on-SiC high electron mobility transistor (HEMT) technology, it offers higher breakdown voltage, wider bandwidth, and higher efficiency.

The High Efficiency RF Amplifier MM2080P48AV delivers a typical output power of 60W with a minimum of 50W, featuring excellent power flatness across the entire frequency band. It achieves smaller dimensions and lighter weight while maintaining high power output, making it ideal for space-constrained system integration scenarios. Additionally, the MM2080P48AV incorporates built-in forward/reverse power monitoring and VSWR protection, along with over-temperature, over-voltage, and over-current protection. These features ensure stable operation in harsh environments, making it suitable for high-performance applications such as security systems, communication systems, test and measurement equipment, and radar systems.

This broadband high power amplifier builds upon Mars RF's over 20 years of technical expertise and manufacturing experience in microwave RF technology, delivering amplifier solutions with higher power density, enhanced environmental adaptability, and easier integration.

Whether upgrading existing systems or developing new products, this 2–8GHz 60W power amplifier module is your ideal choice.

1. Can the product parameters be changed according to the customer’s needs?

Yes, we can. If you have special needs, please contact us with the specific parameter information, we support customized production. After communicating with the engineer, we will reply to you immediately.

2. Do all RF high power amplifiers need heat sinks and fans?

All RF modules require adequate heat sinks. Fans may also be required depending on the particular module. can provide heat sinks, but additional fees are required.