Broadband High Power Microwave Amplifiers Module MM002052P47A
Product introduction
This MM002052P47A radio frequency broadband high power amplifier covers frequencies from 20MHz to 520MHz with 50 Watts typical saturated power. This radio frequency high power amplifier RF typically delivers 47dBm CW output power with the gain flatness of ±2 dB. Mars RF’s radio frequency broadband high power amplifier module features higher efficiency, wider bandwidth with higher linearity and excellent harmonic performance. This broadband high power amplifier RF utilize advanced solid state devices like GaN(or gallium nitride amplifier) , which features high power density and efficiency, making them suitable for high-power applications and continuous wave applications such as EW, emergency escape,interfering backpack, test and measurement etc.
By combining the best features of GaN, GaAs and LDMOS power device technologies, Mars RF's radio frequency wideband amplifiers are able to achieve unprecedented levels of performance. The most important thing is that almost all of Mars RF's GaN, GaAs and LDMOS transistors and components are supplied by Chinese supplier. Therefore, there will be no supply shortages due to national policies, ensuring the products are delivered as per agreed date. MM002052P43A RF broadband high power amplifier offers high efficiency across an ultra-wide working band, ensuring consistent and reliable performance in even the most demanding environments. By the way, Mars RF has established the most well-organized quality control and quality management system based on high quality system to offer the customers not only the best price in the market but also the most reliable quality and fast-responding service.
Key Features
• High gain and high power amplifier
• Instantaneous ultra-broadband
• Class AB
• Optional external heatsink
• Built-in control and protection circuits
• microwave technology
Product quality control
In the whole process of product design and development, Mars RF, from beginning to end, pays attention to every detail control. From the selection of raw materials to the determination of the production process, to the control of the production process, and then to the testing and verification of the finished product, every step is strictly screened and inspected.

FAQ
1. Can you ship the goods on our DHL, FedEx or UPS account?
Yes, we can ship the order to any location upon the customer’s special request and use your shipping account number.
2. Tell the difference between GaN, GaAs, and LDMOS power devices.
GaN, GaAs, and LDMOS power devices are at the forefront of modern semiconductor technology, each with its unique advantages. GaN devices, for instance, are known for their high power density and efficiency, making them suitable for high-power applications. GaAs devices, on the other hand, offer excellent peRFormance in terms of speed and power consumption, making them ideal for high-frequency applications. LDMOS devices, with their high reliability and low noise characteristics, are often used in amplifiers that require precision and stability.
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Picture
Model No.
Data Sheet
Start(MHz)
Stop(MHz)
Pout(Watts)
Gain(dB)
Voltage(V)
Mode
Size(mm)
Quote
Start:1.5
Stop:30
Pout:200
Gain:53
Size:200x150x30



EW
Radar
Test and Measurement
Communication

