The MM1517P53B is a newly developed 1500-1700MHz, 200W narrowband, high-power gallium nitride amplifier module by the Mars R&D team. Manufactured using gallium nitride (GaN) and chip-wire technology, this module delivers best-in-class power performance and an exceptional power-to-volume ratio. GaN has high electron mobility, supports greater gain at higher frequencies, and has higher efficiency than equivalent LDMOS (laterally diffused MOSFET) technology. GaN also has high activation energy, resulting in excellent thermal performance and significantly higher breakdown voltage. The advantages of gallium nitride transistors also include higher power density, higher breakdown voltage, higher thermal conductivity, and lower power requirements. These advantages can lead to higher efficiency (even at higher frequencies), smaller form factors, lower overall system ratings, higher reliability, and best-in-class performance.

The narrowband module MM1517P53B has excellent power gain flatness of ±1dB; stable three-temperature power characteristics, and can reach the rated power (typical value) at rated high temperature, room temperature and low temperature; forward and reverse power detection, integrated forward/reverse monitoring to ensure normal operation of the system.

1. Can the product parameters be changed according to the customer’s needs?

Mars RF-Delivering more than products; delivering commitment. If you have special needs, please contact us with the specific parameter information, we support customized production. After communicating with the engineer, we will reply to you immediately.

2. Do all RF high power amplifiers need heat sinks and fans?

All RF modules require adequate heat sinks. Fans may also be required depending on the particular module. Mars RF can provide heat sinks. Any requirements, please contact our sales.