The Model MPM9298P53A is an X-band high power pulse amplifier that operates over the 9.2 to 9.8 GHz frequency range, with pulse widths up to 300 µs and duty cycles up to 5%, is widely used in the UHF band. The amplifier delivers more than 200 watts of peak output power to a 50-ohm load.

Mars RF's high power amplifiers offer the advantage of stable reception and output signals, with input and output return losses of up to -10 dB. The RF product have a good additional power efficiency of up to 12%.

The GaN high power amplifier has a small size (180x 125x25mm/ 7x4.9x0.98inch) and light weight (2kg/4.4lbs). This advantage of the pulsed amplifier allows it to be used in applications where size and weight are critical.

The RF input and output connectors of this GaN power amplifier utilize SMA connectors, which are industry-standard specifications for easy connection. This pulse RF amplifier belongs to class C, which is a highly efficient amplifier device with high output power and high tunability that can be tuned by changing the conduction angle.

The employment of gallium nitride (GaN) and chip-and-wire technology in the manufacturing of the pulsed power amplifier ensures a state-of-the-art power performance with excellent power-to-volume ratio. In recent years, the application of GaN in RF high power rate amplifiers has received widespread attention.

√ Small Size and light weight 

√ Power added efficiency＞10% 

√ Digital interface option 

√ Forward and reflected power coupling ports 

√ pulse width/duty cycle protection 

√ Over voltage, and over current protection

What is a Class C amplifier?

Class C amplifiers are tuned amplifiers that operate in two different modes of operation, tuned or untuned. Class C amplifiers are far more efficient than A, B, and AB. up to 80% efficiency can be achieved in RF related operations.